Motore di ricerca datesheet componenti elettronici |
|
FZT869 Scheda tecnica(PDF) 1 Page - Zetex Semiconductors |
|
FZT869 Scheda tecnica(HTML) 1 Page - Zetex Semiconductors |
1 / 2 page FZT869 SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR ISSUE 2 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS - FZT869 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6V Peak Pulse Current ICM 20 A Continuous Collector Current IC 7A Power Dissipation at Tamb=25°C Ptot 3W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum FZT869 ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 60 120 V IC=100µA Collector-Emitter Breakdown Voltag V(BR)CER 60 120 V IC=1µA, RB ≤1kΩ Collector-Emitter Breakdown Voltage V(BR)CEO 25 35 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 68 V IE=100µA Collector Cut-Off Current ICBO 50 1 nA µ A VCB=50V VCB=50V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ 50 1 nA µ A VCB=50V VCB=50V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 35 67 168 50 110 215 350 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=6.5A, IB=150mA* Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC=6.5A, IB=300mA Base-Emitter Turn-On Voltage VBE(on) 1.13 V IC=6.5A, VCE=1V* Static Forward Current Transfer Ratio hFE 300 300 200 40 450 450 300 100 IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* Transition Frequency fT 100 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 70 pF VCB=10V, f=1MHz* Switching Times ton toff 60 680 ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device C C E B 3 - 272 3 - 271 |
Codice articolo simile - FZT869 |
|
Descrizione simile - FZT869 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |