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FZT855 Scheda tecnica(PDF) 1 Page - Zetex Semiconductors |
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FZT855 Scheda tecnica(HTML) 1 Page - Zetex Semiconductors |
1 / 3 page SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR ISSUE 4 - NOVEMBER 2001 ✪ FEATURES * Up to 5 Amps continuous collector current, up to 10 Amp peak * Very low saturation voltage * Excellent h FE specified up to 10 Amps PARTMARKING DETAIL - FZT855 COMPLEMENTARY TYPE - FZT955 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 250 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6V Peak Pulse Current ICM 10 A Continuous Collector Current IC 5A Power Dissipation at Tamb=25°C Ptot 3W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum FZT855 C C E B 78 |
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