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FZT849 Scheda tecnica(PDF) 2 Page - Zetex Semiconductors |
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FZT849 Scheda tecnica(HTML) 2 Page - Zetex Semiconductors |
2 / 3 page FZT849 SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR ISSUE 3 - JANUARY 1996 FEATURES * Extremely low equivalent on-resistance; RCE(sat)36mΩ at 5A * 7 Amp continuous collector current (20 Amp peak) * Very low saturation voltages * Excellent gain charateristics specified upto 20 Amp * Ptot =3 Watts PARTMARKING DETAILS - FZT849 COMPLEMENTARY TYPE - FZT949 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6V Peak Pulse Current ICM 20 A Continuous Collector Current IC 7A Power Dissipation at Tamb=25°C Ptot 3W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 inch square minimum FZT849 ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 80 120 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CER 80 120 V IC=1µA, RB ≤1kΩ Collector-Emitter Breakdown Voltage V(BR)CEO 30 40 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 68 V IE=100µA Collector Cut-Off Current ICBO 50 1 nA µ A VCB=70V VCB=70V, Tamb=100°C Collector Cut-Off Current ICER R ≤1kΩ 50 1 nA µ A VCB=70V VCB=70V, Tamb=100°C Emitter Cut-Off Current IEBO 10 nA VEB=6V Collector-Emitter Saturation Voltage VCE(sat) 35 67 168 50 110 215 350 mV mV mV mV IC=0.5A, IB=20mA* IC=1A, IB=20mA* IC=2A, IB=20mA* IC=6.5A, IB=300mA* Base-Emitter Saturation Voltage VBE(sat) 1.2 V IC=6.5A, IB=300mA Base-Emitter Turn-On Voltage VBE(on) 1.13 V IC=6.5A, VCE=1V* Static Forward Current Transfer Ratio hFE 100 100 100 30 200 200 150 65 300 IC=10mA, VCE=1V IC=1A, VCE=1V* IC=7A, VCE=1V* IC=20A, VCE=2V* Transition Frequency fT 100 MHz IC=100mA, VCE=10V f=50MHz Output Capacitance Cobo 75 pF VCB=10V, f=1MHz* Switching Times ton toff 45 630 ns ns IC=1A, IB1=100mA IB2=100mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device C C E B 3 - 258 3 - 257 |
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