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SB1060FCT Scheda tecnica(PDF) 1 Page - Won-Top Electronics |
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SB1060FCT Scheda tecnica(HTML) 1 Page - Won-Top Electronics |
1 / 3 page SB1020FCT – SB10100FCT 1 of 3 © 2002 Won-Top Electronics SB1020FCT – SB10100FCT 10A ISOLATION SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip B ! Guard Ring for Transient Protection ! High Current Capability, Low Forward C ! Low Reverse Leakage Current ! High Surge Current Capability G A ! Plastic Material has UL Flammability Classification 94V-O PIN1 2 3 D Mechanical Data F E ! Case: ITO-220 Full Molded Plastic ! Terminals: Plated Leads Solderable per P MIL-STD-750, Method 2026 ! Polarity: As Marked on Body I ! Weight: 2.24 grams (approx.) L ! Mounting Position: Any H ! Marking: Type Number PIN 1 - + J PIN 3 - PIN 2 K Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol SB 1020FCT SB 1030FCT SB 1040FCT SB 1050FCT SB 1060FCT SB 1080FCT SB 10100FCT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 20 30 40 50 60 80 100 V RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 V Average Rectified Output Current @TC = 95°C IO 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 5.0A VFM 0.55 0.75 0.85 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 0.5 50 mA Typical Junction Capacitance (Note 1) Cj 700 pF Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS ITO-220 Dim Min Max A 14.9 15.1 B — 10.5 C 2.62 2.87 D 3.56 4.06 E 13.46 14.22 F 0.68 0.94 G 3.74 Ø 3.91 Ø H 5.84 6.86 I 4.44 4.70 J 2.54 2.79 K 0.35 0.64 L 1.14 1.40 P 2.41 2.67 All Dimensions in mm |
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