SB1020DC – SB10100DC

1 of 3

© 2002 Won-Top Electronics

SB1020DC – SB10100DC

10A D

Features

!

Schottky Barrier Chip

C

!

Guard Ring Die Construction for

A

J

Transient Protection

!

High Current Capability

!

Low Power Loss, High Efficiency

B

!

High Surge Current Capability

D

E

!

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

G

Protection Applications

H

K

P

P

Mechanical Data

!

Case: Molded Plastic

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

Polarity: Cathode Band

PIN 1 -

+

!

Weight: 1.7 grams (approx.)

PIN 3 -

Case PIN 2

!

Mounting Position: Any

Potive CT

!

Marking: Type Number

!

Standard Packaging: 24mm Tape (EIA-481)

PIN 1 +

-

PIN 3 +

Case PIN 2

Negative CT

Suffix with “N”

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

SB

1020DC

SB

1030DC

SB

1040DC

SB

1050DC

SB

1060DC

SB

1080DC

SB

10100DC

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

20

30

40

50

60

80

100

V

RMS Reverse Voltage

14

21

28

35

42

56

70

V

Average Rectified Output Current

10

A

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

150

A

Forward Voltage

0.55

0.75

0.85

V

Peak Reverse Current

At Rated DC Blocking Voltage

0.5

50

mA

Typical Junction Capacitance (Note 1)

600

pF

Typical Thermal Resistance Junction to Ambient

60

K/W

Operating and Storage Temperature Range

-50 to +150

°C

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

WTE

POWER SEMICONDUCTORS

Dim

Min

Max

A

9.8

10.4

B

9.6

10.6

C

4.4

4.8

D

8.5

9.1

E

—0.7

G

1.0

1.4

H

—0.9

J

1.2

1.4

K

0.3

0.7

P

2.35

2.75

All Dimensions in mm

PIN 1

2

3