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2SAR553P Scheda tecnica(PDF) 1 Page - Rohm

Il numero della parte 2SAR553P
Spiegazioni elettronici  Midium Power Transistors (-50V / -2A)
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Produttore elettronici  ROHM [Rohm]
Homepage  http://www.rohm.com
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2SAR553P Scheda tecnica(HTML) 1 Page - Rohm

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c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
Midium Power Transistors (-50V / -2A)
2SAR553P
 Structure
 Dimensions
(Unit : mm)
PNP Silicon epitaxial planar transistor
 Features
1) Low saturation voltage, typically
VCE (sat) = -0.4V (Max.) (IC / IB= -700mA / -35mA)
2) High speed switching
 Applications
Driver
 Inner circuit
(Unit : mm)
Package
Taping
Code
T100
Basic ordering unit (pieces)
1000
2SAR553P
 Absolute maximum ratings
(Ta = 25
C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-6
V
DC
IC
-2
A
Pulsed
ICP
-4
A
PD
0.5
W
PD
2W
Junction temperature
Tj
150
C
Range of storage temperature
Tstg
-55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
 Packaging specifications
Type
Parameter
Collector current
Power dissipation
*1
*2
*3
Abbreviated symbol : MG
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter


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