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BTB1590N3 Scheda tecnica(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1590N3 Scheda tecnica(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C313N3 Issued Date : 2002.06.18 Revised Date : 2006.10.20 Page No. : 1/5 BTB1590N3 CYStek Product Specification Low VCESAT PNP Epitaxial Planar Transistor BTB1590N3 Features • Low VCE(SAT), VCE(SAT)=-0.18V(typically) at IC=-500mA/IB=-50mA. • Complementary to BTD2444N3. • Pb-free package Symbol Outline Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1 A Power Dissipation Pd 225 mW Thermal Resistance, Junction to Ambient RθJA 556 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C SOT-23 BTB1590N3 E:Emitter C:Collector B:Base |
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