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TD62003F Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TD62003F Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 13 page TD62001~004P/AP/F/AF 2001-06-27 2 SCHEMATICS (EACH DRIVER) TD62001P / AP / F / AF TD62002P / AP / F / AF TD62003P / AP / F / AF TD62004P / AP / F / AF Note: The input and output parasitic diodes cannot be used as clamp diodes. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT P, F −0.5~35 Output Sustaining Voltage AP, AF VCE (SUS) −0.5~50 V Output Current IOUT 500 mA / ch Input Voltage VIN (Note 1) −0.5~30 V Input Current IIN (Note 2) 25 mA P, F 35 Clamp Diode Reverse Voltage AP, AF VR 50 V Clamp Diode Forward Current IF 500 mA P 1.0 AP 1.47 Power Dissipation F, AF PD 0.54 / 0.625 (Note 3) W P −30~75 Operating Temperature AP, F, AF Topr −40~85 °C Storage Temperature Tstg −55~150 °C Note 1: Except TD62001P / AP / F / AF Note 2: Only TD62001P / AP / F / AF Note 3: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%) |
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