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BDY56 Scheda tecnica(PDF) 1 Page - Comset Semiconductor |
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BDY56 Scheda tecnica(HTML) 1 Page - Comset Semiconductor |
1 / 3 page Page 1 of 3 LF Large Signal Power Amplification High Current Fast Switching. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit BDY55 60 VCEO Collector-Emitter Voltage BDY56 120 V BDY55 100 VCBO Collector-Base Voltage BDY56 150 V VEBO Emitter-Base Voltage BDY55 BDY56 7 V IC Collector Current BDY55 BDY56 15 A IB Base Current BDY55 BDY56 7 A PTOT Power Dissipation @ TC = 25° BDY55 BDY56 117 Watts TJ Junction Temperature BDY55 BDY56 200 TS Storage Temperature BDY55 BDY56 -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-C Thermal Resistance, Junction to Case BDY55 BDY56 1.5 °C/W N NP PN N S SIIL LIIC CO ON N T TR RA AN NS SIIS ST TO OR RS S,, D DIIF FF FU US SE ED D M ME ES SA A |
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Descrizione simile - BDY56 |
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