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BD132 Scheda tecnica(PDF) 2 Page - Comset Semiconductor |
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BD132 Scheda tecnica(HTML) 2 Page - Comset Semiconductor |
2 / 2 page COMSET SEMICONDUCTORS 2 PNP BD132 NPN BD131 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit IE=0 , - VCB=40 V - - 5 -ICBO Collector cut-off current IE=0 , - VCB=40 V ,Tj= 150°C - - 500 µA -IEBO Emitter cut-offcurrent IC=0, -VEB=3 V - - 5 µA -IC=0.5 A, -IB=50 mA - - 0.3 -VCE(SAT) Collector-Emitter saturation Voltage -IC=2.0 A, -IB=200 mA - - 1.2 V -IC=0.5 A, -IB=50 mA - - 0.7 -VBE(SAT) Base-Emitter saturation Voltage -IC=2.0 A, -IB=200 mA - - 1,5 V -VCE=12 V, -IC=500m A 40 - - hFE DC Current Gain -VCE=1 V, -IC=2 A 20 - - MECHANICAL DATA CASE TO-126 DIMENSIONS mm inches min max min max A 7.4 7.8 0.295 0.307 B 10.5 10.8 0.413 0.425 C 2.4 2.7 0.094 0.106 D 0.7 0.9 0.027 0.035 E 2.2 typ. 0.087 typ. F 0.49 0.75 0.019 0.029 G 4.4 typ. 0.173 typ. H 2.54 typ. 0.100 typ. L 15.7 typ. 0.618 typ. M 1.2 typ. 0.047 typ. N 3.8 typ. 0.149 typ. P 3.0 3.2 0.118 0.126 Pin 1 : Emitter Pin 2 : Collector Case : Base |
Codice articolo simile - BD132 |
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Descrizione simile - BD132 |
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