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3VD235700YL Scheda tecnica(PDF) 1 Page - Silan Microelectronics Joint-stock |
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3VD235700YL Scheda tecnica(HTML) 1 Page - Silan Microelectronics Joint-stock |
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1 / 1 page 3VD235700YL 3VD235700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION 3VD235700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Advanced termination scheme to provide enhanced voltage-blocking capability. Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251 type and the typical equivalent product is 2N70. The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. Die size: 2.72mm*2.06mm. Chip Thickness: 300±20 μm. Top metal: Al, Backside Metal: Ag. CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS ±30 V Drain Current ID 2.0 A Power Dissipation (TO-251 Package) PD 44 W Operation Junction Temperature TJ -55~+150 °C Storage Temperature Tstg -55~+150 °C ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Symbol Test conditions Min. Typ. Max. Unit Drain -Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 700 - - V Gate Threshold Voltage VTH VGS= VDS, ID=250µA 2.0 - 4.0 V Drain-Source Leakage Current IDSS VDS=700V, VGS=0V - - 1.0 µA Static Drain- Source On State Resistance RDS(on) VGS=10V, ID=1.0A - - 6.5 Ω Gate-Source Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Source-Drain Diode Forward on Voltage VFSD IS=2.0A, VGS=0V - - 1.4 V HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2008.10.15 Http: www.silan.com.cn Page 1 of 1 |
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