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3VD037060NEJL Scheda tecnica(PDF) 1 Page - Silan Microelectronics Joint-stock |
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1 / 1 page 3VD037060NEJL 3VD037060NEJL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION 3VD037060NEJL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Zener diode ESD protected up to 500V (HBM). High density cell design for low RDS (ON). Rugged and reliable. Fast switching performance. High saturation current capability. The chips may be packaged in SOT-23 type . The packaged product is widely used in the small servo motor control, power MOS-FET gate drivers, and other switching applications. Die size: 0.37mm*0.37mm. Chip Thickness: 230±20 μm. Top metal: Al, Backside Metal: Au. CHIP TOPOGRAPHY EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current ID 100 mA Drain Current --Plused * IDM 600 mA Power Dissipation (SOT-23) PD 200 mW Operation Junction Temperature TJ 150 °C Storage Temperature Tstg -55-150 °C Note:* Repetitive rating: pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Symbol Test conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA 60 - - V Gate-Threshold Voltage* Vth(GS) VDS= VGS, ID=250µA 1.2 - 2.0 V Gate-body Leakage lGSS VDS=0V, VGS =±20V - - ±5 µA Zero Gate Voltage Drain Current IDSS VDS=60V, VGS =0V - - 1 µA VGS=5.0V, ID=100mA - 4 6 Drain-Source On-Resistance * RDS(on) VGS=10V, ID=100mA - 3 5 Ω HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.1 2008.10.15 Http: www.silan.com.cn Page 1 of 1 |
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