3VD037060NEJL datasheet(1/1 Pages) SILAN

Il numero della parte	3VD037060NEJL

Spiegazioni elettronici	N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE

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3VD037060NEJL

N-CH MOSFET CHIPS WITH ESD PROTECTED

STRUCTURE

DESCRIPTION

3VD037060NEJL is a N-Channel enhancement mode

MOS-FET chip fabricated in advanced silicon

epitaxial planar technology.

Zener diode ESD protected up to 500V (HBM).

High density cell design for low RDS (ON).

Rugged and reliable.

Fast switching performance.

High saturation current capability.

The chips may be packaged in SOT-23 type .

The packaged product is widely used in the small

servo motor control, power MOS-FET gate drivers,

and other switching applications.

Die size: 0.37mm*0.37mm.

Chip Thickness: 230±20

μm.

Top metal: Al, Backside Metal: Au.

CHIP TOPOGRAPHY

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Drain Current

ID

100

mA

Drain Current --Plused *

IDM

600

mA

Power Dissipation (SOT-23)

PD

200

mW

Operation Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

-55-150

°C

Note:* Repetitive rating: pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (Tamb=25°C)

Parameter

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=10µA

60

-

V

Gate-Threshold Voltage*

Vth(GS)

VDS= VGS, ID=250µA

1.2

-

2.0

V

Gate-body Leakage

lGSS

VDS=0V, VGS =±20V

-

±5

µA

Zero Gate Voltage Drain Current

IDSS

VDS=60V, VGS =0V

-

1

µA

VGS=5.0V, ID=100mA

-

4

6

Drain-Source On-Resistance *

RDS(on)

VGS=10V, ID=100mA

-

3

5

Ω

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

REV:1.1

2008.10.15

Http: www.silan.com.cn

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