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FDG6332C_F085 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor

Il numero della parte FDG6332C_F085
Spiegazioni elettronici  20V N & P-Channel PowerTrench짰MOSFETs
Download  8 Pages
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6332C_F085 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor

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FDG6332C_F085 Rev C2 (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
VGS = 0 V,
ID = –250
µA
Q1
Q2
20
–20
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA,Ref. to 25°C
ID = –250
µA,Ref. to 25°C
Q1
Q2
14
–14
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
VDS = –16 V,
VGS = 0 V
Q1
Q2
1
–1
µA
IGSSF /IGSSR
Gate–Body Leakage, Forward
VGS =
± 12 V, V
DS = 0 V
±100
nA
IGSSF /IGSSR
Gate–Body Leakage, Reverse
VGS =
± 12V , V
DS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Q1
VDS = VGS, ID = 250
µA
0.6
1.1
1.5
Gate Threshold Voltage
Q2
VDS = VGS, ID = –250
µA
-0.6
–1.2
–1.5
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
Q1
Q2
ID = 250
µA,Ref. To 25°C
ID = –250
µA,Ref. to 25°C
–2.8
3
mV/
°C
RDS(on)
Q1
VGS = 4.5 V,
ID =0.7 A
VGS = 2.5 V,
ID =0.6 A
VGS = 4.5 V,
ID =0.7A,TJ=125
°C
180
293
247
300
400
442
Static Drain–Source
On–Resistance
Q2
VGS = –4.5 V, ID = –0.6 A
VGS = –2.5 V, ID = –0.5 A
VGS=–4.5 V, ID =–0.6 A,TJ=125
°C
300
470
400
420
630
700
m
gFS
Q1
VDS = 5 V
ID = 0.7 A
2.8
Forward Transconductance
Q2
VDS = –5 V
ID = –0.6A
1.8
S
ID(on)
Q1
VGS = 4.5 V,
VDS = 5 V
1
On–State Drain Current
Q2
VGS = –4.5 V, VDS = –5 V
–2
A
Dynamic Characteristics
Ciss
Q1
VDS=10 V, V GS= 0 V, f=1.0MHz
113
Input Capacitance
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
114
pF
Coss
Q1
VDS=10 V, V GS= 0 V, f=1.0MHz
34
Output Capacitance
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
24
pF
Crss
Q1
VDS=10 V, V GS= 0 V, f=1.0MHz
16
Reverse Transfer Capacitance
Q2
VDS=–10 V, V GS= 0 V, f=1.0MHz
9
pF
Switching Characteristics (Note 2)
td(on)
Q1
5
10
Turn–On Delay Time
Q2
5.5
11
ns
tr
Q1
7
15
Turn–On Rise Time
Q2
14
25
ns
td(off)
Q1
9
18
Turn–Off Delay Time
Q2
6
12
ns
tf
Q1
1.5
3
Turn–Off Fall Time
Q2
For Q1:
VDS =10 V,
I D= 1 A
VGS= 4.5 V,
RGEN = 6
For Q2:
VDS =–10 V,
I D= –1 A
VGS= –4.5 V, RGEN = 6
1.7
3.4
ns
Qg
Q1
1.1
1.5
Total Gate Charge
Q2
1.4
2
nC
Qgs
Q1
0.24
Gate–Source Charge
Q2
0.3
nC
Qgd
Q1
0.3
Gate–Drain Charge
Q2
For Q1:
VDS =10 V,
I D= 0.7 A
VGS= 4.5 V,
RGEN = 6
For Q2:
VDS =–10 V,
I D= –0.6 A
VGS= –4.5 V, RGEN = 6
0.4
nC


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