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FDG6332C_F085 Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor

Il numero della parte FDG6332C_F085
Spiegazioni elettronici  20V N & P-Channel PowerTrench짰MOSFETs
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6332C_F085 Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor

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©2009 Fairchild Semiconductor Corporation
FDG6332C_F085 Rev C2 (W)
FDG6332C_F085
20V N & P-Channel PowerTrench
®
® MOSFETs
Features
• Q1 0.7 A, 20V.
RDS(ON) = 300 m
Ω @ V
GS = 4.5 V
RDS(ON) = 400 m
Ω @ V
GS = 2.5 V
• Q2 –0.6 A, –20V.
RDS(ON) = 420 m
Ω @ V
GS = –4.5 V
RDS(ON) = 630 m
Ω @ V
GS = –2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
S
G
D
D
G
S
Pin 1
SC70-6
Complementary
6
5
4
3
2
1
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
20
–20
V
VGSS
Gate-Source Voltage
±12
±12
V
ID
Drain Current
– Continuous
(Note 1)
0.7
–0.6
A
– Pulsed
2.1
–2
PD
Power Dissipation for Single Operation
(Note 1)
0.3
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
415
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.32
FDG6332C_F085
7’’
8mm
3000 units
March 2009
• Qualified to AEC Q101
• RoHS Compliant
General Description
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state
resistance
and
yet
maintain
superior
switching performance.
These
devices
have
been
designed
to
offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
• DC/DC converter
• Load switch
• LCD display inverter


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