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FDG6332C_F085 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

Il numero della parte FDG6332C_F085
Spiegazioni elettronici  20V N & P-Channel PowerTrench짰MOSFETs
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDG6332C_F085 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor

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FDG6332C_F085 Rev C2 (W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
Q1
0.25
Maximum Continuous Drain–Source Diode Forward Current
Q2
–0.25
A
VSD
Q1
VGS = 0 V, IS = 0.25 A
(Note 2)
0.74
1.2
Drain–Source Diode Forward
Voltage
Q2
VGS = 0 V, IS = –0.25 A
(Note 2)
–0.77
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad of FR-4
PCB in a still air environment.
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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