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FDG6332C_F085 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor |
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FDG6332C_F085 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDG6332C_F085 Rev C2 (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Q1 0.25 Maximum Continuous Drain–Source Diode Forward Current Q2 –0.25 A VSD Q1 VGS = 0 V, IS = 0.25 A (Note 2) 0.74 1.2 Drain–Source Diode Forward Voltage Q2 VGS = 0 V, IS = –0.25 A (Note 2) –0.77 –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. RθJA = 415°C/W when mounted on a minimum pad of FR-4 PCB in a still air environment. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
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