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FDG410NZ Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDG410NZ Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page March 2009 ©2009 Fairchild Semiconductor Corporation FDG410NZ Rev.B www.fairchildsemi.com 1 FDG410NZ Single N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 m Ω Features Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A HBM ESD protection level > 2 kV (Note 3) High performance trench technology for extremely low rDS(on) High power and current handling capability Fast switching speed Low gate charge RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulaters, providing an extremely low rDS(on) and gate charge (Qg) in a small package. Applications DC/DC converter Power management Load switch MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±8 V ID -Continuous TA = 25 °C (Note 1a) 2.2 A -Pulsed 6.0 PD Power Dissipation TA = 25 °C (Note 1a) 0.42 W Power Dissipation TA = 25 °C (Note 1b) 0.38 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1a) 300 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1b) 333 Device Marking Device Package Reel Size Tape Width Quantity .41 FDG410NZ SC70-6 7 ” 8 mm 3000 units D G S D D D 3 1 2 6 5 4 SC70-6 D D G D D S |
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