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FDD6780A Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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FDD6780A Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page January 2009 ©2009 Fairchild Semiconductor Corporation FDD6780A / FDU6780A_F071 Rev.C www.fairchildsemi.com 1 D G S D G S G D S D-PAK (TO-252) Short-Lead I-PAK (TO-251AA) FDD6780A / FDU6780A_F071 N-Channel PowerTrench® MOSFET 25 V, 8.6 m Ω Features Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A 100% UIL test RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Applications Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture MOSFET Maximum Ratings T C = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 25 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous (Package limited) TC = 25 °C 30 A -Continuous (Silicon limited) TC = 25 °C 48 -Continuous TA = 25 °C (Note 1a) 16.4 -Pulsed 100 EAS Single Pulse Avalanche Energy (Note 3) 24 mJ PD Power Dissipation TC = 25 °C 32.6 W Power Dissipation TA = 25 °C (Note 1a) 3.7 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 °C RθJC Thermal Resistance, Junction to Case TO-252, TO-251 4.6 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252 (Note 1a) 40 Device Marking Device Package Reel Size Tape Width Quantity FDD6780A FDD6780A D-PAK (TO-252) 13 ’’ 12 mm 2500 units FDU6780A FDU6780A_F071 TO-251AA N/A(Tube) N/A 75 units |
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