STPSC806D datasheet(4/7 Pages) STMICROELECTRONICS

Il numero della parte	STPSC806D

Spiegazioni elettronici	600 V power Schottky silicon carbide diode

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Characteristics

STPSC806D

4/7

Figure 7.

Total capacitive charges versus dIF/dt (typical values)

Figure 5.

Relative variation of thermal

impedance junction to case

versus pulse duration

Figure 6.

Non-repetitive peak surge forward

current versus pulse duration

(sinusoidal waveform,

typical values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

Z

th(j-c)/Rth(j-c)

Single pulse

tp(s)

1.E+00

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

I

FSM(A)

T

j=25 °C

T

j=125 °C

tp(s)

0

2

4

6

8

10

12

14

16

0

50

100

150

200

250

300

350

400

450

500

Q

C(nC)

I

F=8A

V

R=400 V

Tj=150 °C

dIF/dt(A/µs)

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