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STPSC806D Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STPSC806D
Spiegazioni elettronici  600 V power Schottky silicon carbide diode
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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Characteristics
STPSC806D
2/7
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 1.2 x IF(AV) + 0.113 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS) RMS forward current
18
A
IF
Continuous forward current
TC = 115 °C
8
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
30
A
IFRM
Repetitive peak forward current
δ = 0.1, TC = 110 °C,
Tj = 150 °C
30
A
Tstg
Storage temperature range
-55 to +175
°C
Tj
Operating junction temperature
-40 to +175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Maximum Value
Unit
Rth(j-c)
Junction to case
2.4
°C/W
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min.
Typ
Max.
Unit
IR
(1)
1.
tp = 10 ms, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
20
100
µA
Tj = 150 °C
150
1000
VF
(2)
2.
tp = 500 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 8 A
1.4
1.7
V
Tj = 150 °C
1.6
2.1
Table 5.
Other parameters
Symbol
Parameter
Test conditions
Typ
Unit
Qc
Total capacitive charge
Vr = 400 V, IF = 8 A dIF/dt = -200 A/µs
Tj = 150 °C
10
nC
C
Total capacitance
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
450
pF


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