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2SD1023 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1023 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon Power Transistors 2SD1023 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A; IB=5mA 1.5 V VBEsat Emitter-base saturation voltage IC=3A ;IB=5mA 2.0 V ICEO Collector cut-off current VCE=200V; IB=0 0.1 mA ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=3A ; VCE=3V 1500 30000 fT Transition frequency IC=0.5A ; VCE=10V 20 MHz ton Turn-on time 2 μs ts Storage time 8 μs tf Fall time IC=3A; IB=5mA RL=10Ω VBB2=4V 5 μs THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-case Thermal resistance junction to case 4.17 ℃/W |
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