2SC2562 datasheet(2/5 Pages) JMNIC

Il numero della parte	2SC2562

Spiegazioni elettronici	Silicon NPN Power Transistors

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Produttore elettronici	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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Product Specification

2

Silicon NPN Power Transistors

2SC2562

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Base-emitter breakdown voltage

IC=10mA , IB=0

50

V

VCEsat

Collector-emitter saturation voltage

IC=3A; IB=0.15A

0.4

V

VBEsat

Base-emitter saturation voltage

IC=3A; IB=0.15A

1.2

V

ICBO

Collector cut-off current

VCB=50V; IE=0

1

μA

IEBO

Emitter cut-off current

VEB=5V; IC=0

1

μA

hFE –1

DC current gain

IC=1A ; VCE=1V

70

240

hFE -2

DC current gain

IC=3A ; VCE=1V

30

fT

Transition frequency

IC=1A ; VCE=4V

120

MHz

Cob

Output capacitance

f=1MHz ; VCB=10V

80

pF

Switching times

ton

Turn-on time

0.1

μs

ts

Storage time

1.0

μs

tf

Fall time

IC=3A ;IB1=- IB2=0.15A

RL=10Ω,VCC=30V

0.1

μs

hFE-1 Classifications

O

Y

70-140

120-240

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2SC2562 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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