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2SC2562 Scheda tecnica(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC2562 Scheda tecnica(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 5 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC2562 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Base-emitter breakdown voltage IC=10mA , IB=0 50 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.15A 0.4 V VBEsat Base-emitter saturation voltage IC=3A; IB=0.15A 1.2 V ICBO Collector cut-off current VCB=50V; IE=0 1 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 μA hFE –1 DC current gain IC=1A ; VCE=1V 70 240 hFE -2 DC current gain IC=3A ; VCE=1V 30 fT Transition frequency IC=1A ; VCE=4V 120 MHz Cob Output capacitance f=1MHz ; VCB=10V 80 pF Switching times ton Turn-on time 0.1 μs ts Storage time 1.0 μs tf Fall time IC=3A ;IB1=- IB2=0.15A RL=10Ω,VCC=30V 0.1 μs hFE-1 Classifications O Y 70-140 120-240 |
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