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BD135 Scheda tecnica(PDF) 1 Page - Motorola, Inc

Il numero della parte BD135
Spiegazioni elettronici  Plastic Medium Power Silicon NPN Transistor
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Produttore elettronici  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BD135 Scheda tecnica(HTML) 1 Page - Motorola, Inc

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Motorola Bipolar Power Transistor Device Data
Plastic Medium Power Silicon
NPN Transistor
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
• DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc
• BD 135, 137, 139 are complementary with BD 136, 138, 140
MAXIMUM RATINGS
Rating
Symbol
Type
Value
Unit
Collector–Emitter Voltage
VCEO
BD 135
BD 137
BD 139
45
60
80
Vdc
Collector–Base Voltage
VCBO
BD 135
BD 137
BD 139
45
60
100
Vdc
Emitter–Base Voltage
VEBO
5
Vdc
Collector Current
IC
1.5
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TA = 25_C
Derate above 25
_C
PD
1.25
10
Watts
mW/
_C
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
12.5
100
Watt
mW/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to + 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
10
_C/W
Thermal Resistance, Junction to Ambient
θJA
100
_C/W
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BD135/D
© Motorola, Inc. 1995
BD135
BD137
BD139
1.5 AMPERE
POWER TRANSISTORS
NPN SILICON
45, 60, 80 VOLTS
10 WATTS
CASE 77–08
TO–225AA TYPE
REV 7


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