1 / 2 page
Dated : 27/12/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BC182…BC184
NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
BC182
BC183, BC184
VCBO
60
45
V
Collector Emitter Voltage
BC182
BC183, BC184
VCEO
50
30
V
Emitter Base Voltage
VEBO
6
V
Collector Current
IC
100
mA
Total Power Dissipation
Ptot
350
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 10 µA
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 100 mA
BC182, BC183
BC184
BC182
BC183
BC184
BC182, BC183
BC184
hFE
hFE
hFE
hFE
hFE
hFE
hFE
40
100
120
120
250
80
130
-
-
500
800
800
-
-
-
-
-
-
-
-
-
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 30 V
BC182
BC183, BC184
ICBO
-
-
15
15
nA
Emitter Base Cutoff Current
at VEB = 4 V
IEBO
-
15
nA
Collector Base Breakdown Voltage
at IC = 10 µA
BC182
BC183, BC184
V(BR)CBO
60
45
-
-
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
BC182
BC183, BC184
V(BR)CEO
50
30
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
6
-
V
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package