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2SA1037AK Scheda tecnica(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SA1037AK Scheda tecnica(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Any changing of specification will not be informed individual 2SA1037AK PNP Silicon General Purpose Transistor http://www.SeCoSGmbH.com Elektronische Bauelemente * Dim Min Max A 2.70 3.10 B 1.30 1.70 C 1.00 1.30 D 0.35 0.50 G 1.70 2.30 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 1.25 1.65 S 2.25 3.00 All Dimension in mm SC-59 S G D B L A 1 3 2 Top View H C J K BASE EMITTER COLLECTOR FEATURES RoHS Compliant Product. n n Excellent hFE linearity. n Complments the 2SC2412K. MARKING : FP, FQ, FR MAXIMUM RATINGS* TA=25 C O unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -150 mA PC Collector Dissipation 200 mW TJ, Tstg Junction and Storage Temperature -55~150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1uA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50µA, IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 µA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 µA DC current gain hFE VCE=-6V,IC=-1mA 120 56 0 Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V Transition frequency fT VCE=-12V,IC=-2mA,f=30MHz 140 MHz Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 4 5 pF CLASSIFICATION OF hFE Rank P Q R Range 120 - 270 180 - 390 27 0 - 560 01-Jun-2002 Rev. A Page 1 of 2 A suffix of "-C" specifies halogen & lead-free |
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