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2SC2270 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SC2270 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2270 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 20 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 8 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.1A 1.0 V VBE Base-emitter voltage IC=4A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=40V; IE=0 0.1 µA IEBO Emitter cut-off current VEB=8V; IC=0 0.1 µA hFE-1 DC current gain IC=0.5A ; VCE=2V 140 450 hFE-2 DC current gain IC=4A ; VCE=2V 70 fT Transition frequency IC=0.5A ; VCE=2V 100 MHz COB Collector output capacitance IE=0;f=1MHz ; VCB=10V 40 pF hFE-1 Classifications A B C 140-240 200-330 300-450 |
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