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2SC1358 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SC1358 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1358 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0 500 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 10 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.2 V ICES Collector cut-off current VCE=1400V; VBE=0 1.0 mA ICBO Collector cut-off current VCB=1000V; IE=0 20 µA IEBO Emitter cut-off current VEB=5V; IC=0 200 µA hFE-1 DC current gain IC=0.5A ; VCE=15V 10 45 hFE-2 DC current gain IC=3A ; VCE=15V 5 35 tstg Storage time 10 µs tf Fall time IC=4A; IB1=-IB2=1.0A PW=20µs 1.0 µs |
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