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2SD1163A Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SD1163A Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1163,2SD1163A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT 2SD1163 120 V(BR)CEO Collector-emitter breakdown voltage 2SD1163A IC=10mA ;RBE=: 150 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 6 V 2SD1163 2.0 VCEsat Collector-emitter saturation voltage 2SD1163A IC=5A, IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A, IB=0.5A 1.2 V 2SD1163 VCB=300V;IE=0 5 mA ICBO Collector cut-offcurrent 2SD1163A VCB=350V;IE=0 5 mA hFE DC current gain IC=5A ; VCE=5V 25 Switching times tf Fall time ICM=3.5A;IB1 =0.45A 0.5 µs |
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