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2SD1136 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SD1136 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1136 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0 80 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V VBEsat Base-emitter saturation voltage IC=4 A;IB=0.4 A 1.5 V ICEO Collector cut-off current VCE=200V; IB=0 50 IEBO Collector cut-off current VEB=5V; IC=0 50 hFE DC current gain IC=4A ; VCE=5V 20 |
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