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MJE803 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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MJE803 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors MJE800/801/802/803 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT MJE800/801 60 V(BR)CEO Collector-emitter breakdown voltage MJE802/803 IC=50mA;IB=0 80 V MJE800/802 IC=1.5A ;IB=30mA 2.5 VCE(sat)-1 Collector-emitter saturation voltage MJE801/803 IC=2A ;IB=40mA 2.8 V VCE(sat)-2 Collector-emitter saturation voltage IC=4A ;IB=40mA 3.0 V MJE800/802 IC=1.5A ; VCE=3V VBE-1 Base-emitter on voltage MJE801/803 IC=2A ; VCE=3V 2.5 V VBE-2 Base-emitter on voltage IC=4A ; VCE=3V 3.0 V MJE800/801 VCE=60V; IB=0 ICEO Collector cut-off current MJE802/803 VCE=80V; IB=0 100 µA ICBO Collector cut-off current VCB=Rated BVCEO; IE=0 TC=100 100 500 µA IEBO Emitter cut-off current VEB=5V; IC=0 2 mA MJE800/802 IC=1.5A ; VCE=3V hFE-1 DC current gain MJE801/803 IC=2A ; VCE=3V 750 hFE-2 DC current gain IC=4A ; VCE=3V 100 |
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