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2SC1325 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1325 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1325 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 600 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A 4.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.2 A 1.1 V ICES Collector cut-off current VCE=1500V;VBE=0 1.0 mA ICBO Collector cut-off current VCB=1000V; IE=0 20 μA IEBO Emitter cut-off current VEB=5V; IC=0 200 μA hFE-1 DC current gain IC=1A ; VCE=15V 10 45 hFE-2 DC current gain IC=5A ; VCE=15V 5 35 ts Storage time 10 μs tf Fall time IC=5A ;IB1=-IB2=1.0A PW=20μs 0.8 μs |
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