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2SC1295 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1295 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1295 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 350 V V(BR)EBO Emitter-base breakdown votage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2 A;IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=2 A;IB=1A 1.5 V ICBO Collector cut-off current VCB=1000V;IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V;IC=0 0.1 mA hFE DC current gain IC=1.5A ; VCE=5V 3 13 |
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