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1N4006 Scheda tecnica(PDF) 1 Page - Silan Microelectronics Joint-stock |
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1N4006 Scheda tecnica(HTML) 1 Page - Silan Microelectronics Joint-stock |
1 / 3 page MOSPEC 1N4001 THRU 1N4007 GENERAL PURPOSE SILICON RECTIFIER VOLTAGE RANGE 50 TO 1000 Volts Current 1 Ampere FEATURES * Low cost construction * Low forward voltage drop * Low reverse leakage * High forward surge current capability * High temperature soldering guaranteed 260℃/10 seconds, 0.375”(9.5 mm) lead length at 5 lbs(2.3kg) tension MECHANICAL DATA * Case:Transfer Molded Plastic * Epoxy: UL94V-O rate flame retardant * Terminals:Solderable Per MIL-STD-202 Method 208 * Polarity:Color band denotes cathode end * Mounting position: Any * Weight: 0.012 ounce. 0.33 gram (approx) DO-41 MILLIMETERS DIM MIN MAX A 2.00 2.70 B 25.40 --- C 4.20 5.20 D 0.70 0.90 MAXIMUM RATINGS AND ELECTRICAL CHARATERISTICS * Rating at 25℃ ambient temperature unless otherwise specified * Single phase,half wave. 60Hz, resistive or inductive load. * For capacitive load derate current by 20 % Characteristic Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V Average Rectifier Forward Current Per Leg TC=125℃ IF(AV) 1.0 A Non-Repetitive Peak Surge Current (Surge applied at rate load conditions halfware, single phase, 60Hz) IFSM 30 A Maximum Instantaneous Forward Voltage ( IF =1.0 Amp TC = 25℃) VF 1.1 V Maximum Instantaneous Reverse Current ( Rated DC Voltage, TC = 25℃) ( Rated DC Voltage, TC = 100℃) IR 5.0 50 uA Typical Junction Capacitance (Reverse Voltage of 4 volts & f=1 MHz) Cj 15 pF Typical Thermal Resistance Rθ jA 50 ℃ /W Operating and Storage Junction Temperature Range TJ , Tstg -65 to +175 ℃ |
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