TSAL7200 datasheet(2/5 Pages) VISHAY

Il numero della parte	TSAL7200

Spiegazioni elettronici	GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package

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Produttore elettronici	VISHAY [Vishay Siliconix]

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TSAL7200

Vishay Telefunken

2 (5)

Rev. 1, 20-May-99

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 81012

Basic Characteristics

Tamb = 25_C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward Voltage

IF = 100 mA, tp = 20 ms

VF

1.35

1.6

V

g

IF = 1 A, tp = 100 ms

VF

2.6

3

V

Temp. Coefficient of VF

IF = 100mA

TKVF

–1.3

mV/K

Reverse Current

VR = 5 V

IR

10

mA

Junction Capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

25

pF

Radiant Intensity

IF = 100 mA, tp = 20 ms

Ie

40

60

mW/sr

y

IF = 1.0 A, tp = 100 ms

Ie

340

500

mW/sr

Radiant Power

IF = 100 mA, tp = 20 ms

fe

35

mW

Temp. Coefficient of

fe

IF = 20 mA

TKfe

–0.6

%/K

Angle of Half Intensity

ϕ

±17

deg

Peak Wavelength

IF = 100 mA

lp

940

nm

Spectral Bandwidth

IF = 100 mA

Dl

50

nm

Temp. Coefficient of

lp

IF = 100 mA

TKlp

0.2

nm/K

Rise Time

IF = 100 mA

tr

800

ns

Fall Time

IF = 100 mA

tf

800

ns

Virtual Source Diameter

method: 63% encircled

energy

ø

2.8

mm

Typical Characteristics (Tamb = 25_C unless otherwise specified)

0

20

406080

0

50

100

150

200

250

Tamb – Ambient Temperature ( °C )

100

94 7957 e

RthJA

Figure 1. Power Dissipation vs. Ambient Temperature

0

20

406080

0

50

100

150

200

250

Tamb – Ambient Temperature ( °C )

100

96 11986

RthJA

Figure 2. Forward Current vs. Ambient Temperature

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