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2SA1061 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1061 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page  INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn 2 isc Silicon PNP Power Transistor 2SA1061 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -2.0 V VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -0.2A; VCE= -5V 20 hFE-2 DC Current Gain IC= -1A; VCE= -5V 40 220 hFE-3 DC Current Gain IC= -4A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V 20 MHz hFE-2 Classifications R Q P 40-80 60-120 100-200 |
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