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MJ11032 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ11032 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Darlington Power Transistor MJ11032 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A; IB= 0 120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A; IB= 250mA 2.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 50A; IB= 500mA 3.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 25A; IB= 250mA 3.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 50A; IB= 500mA 4.5 V ICER Collector Cutoff Current VCE=120V; RBE=1kΩ VCE=120V; RBE=1kΩ; TC=150℃ 2.0 5.0 mA ICEO Collector Cutoff Current VCE= 50V; IB= 0 2.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5.0 mA hFE-1 DC Current Gain IC= 25A, VCE= 5V 1000 18000 hFE-2 DC Current Gain IC= 50A, VCE= 5V 400 |
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