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2SA1010 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1010 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1010 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -7.0 V IC Collector Current-Continuous -7.0 A ICM Collector Current-Peak -15 A IB B Base Current-Continuous -3.5 A Collector Power Dissipation @ Ta=25℃ 1.5 PC Total Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
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