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MJ11022 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte MJ11022
Spiegazioni elettronici  isc Silicon NPN Darlington Power Transistor
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Homepage  http://www.iscsemi.cn
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MJ11022 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
MJ11022
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; IB= 0
250
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 0.1A
2.0
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC= 15A; IB= 0.15A
3.4
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 15A; IB= 0.15A
3.8
V
VBE(on)
Base-Emitter On Voltage
IC= 10A, VCE= 5V
2.8
V
ICEV
Collector Cutoff Current
VCE=250V;VBE(off)=1.5V
VCE=250V;VBE(off)=1.5V;TC=150℃
0.5
5.0
mA
ICEO
Collector Cutoff Current
VCE= 125V; IB= 0
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
2.0
mA
hFE-1
DC Current Gain
IC= 10A, VCE= 5V
400
15000
hFE-2
DC Current Gain
IC= 15A, VCE= 5V
100
COB
Output Capacitance
IE= 0, VCB= 10V; ftest= 0.1MHz
400
pF
Switching Times
td
Delay Time
0.15
μs
tr
Rise Time
1.2
μs
ts
Storage Time
4.4
μs
tf
Fall Time
VCC= 100V; IC= 10A; IB1= 0.1A
VBE(off)= 5V
10
μs
isc Website:www.iscsemi.cn


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