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MJ11022 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ11022 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor MJ11022 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 250 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 0.15A 3.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 0.15A 3.8 V VBE(on) Base-Emitter On Voltage IC= 10A, VCE= 5V 2.8 V ICEV Collector Cutoff Current VCE=250V;VBE(off)=1.5V VCE=250V;VBE(off)=1.5V;TC=150℃ 0.5 5.0 mA ICEO Collector Cutoff Current VCE= 125V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 10A, VCE= 5V 400 15000 hFE-2 DC Current Gain IC= 15A, VCE= 5V 100 COB Output Capacitance IE= 0, VCB= 10V; ftest= 0.1MHz 400 pF Switching Times td Delay Time 0.15 μs tr Rise Time 1.2 μs ts Storage Time 4.4 μs tf Fall Time VCC= 100V; IC= 10A; IB1= 0.1A VBE(off)= 5V 10 μs isc Website:www.iscsemi.cn |
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