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2SC1906 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1906 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1906 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= ∞ 19 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 2 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 600 1000 MHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.0 2.0 pF rbb’ • CC Base Time Constant VCB= 10V,IC = 10 mA,f = 31.8 MHz 10 25 ps PG Power Gain VCE = 10 V,IC = 5mA;f = 45MHz 33 dB PG Power Gain VCE = 10 V,IC = 5mA;f = 200MHz 18 dB isc Website:www.iscsemi.cn 2 |
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