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2SC1906 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte 2SC1906
Spiegazioni elettronici  isc Silicon NPN RF Transistor
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2SC1906 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc RF Product Specification
isc Silicon NPN RF Transistor
2SC1906
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
30
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 3mA ; RBE= ∞
19
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10μA ; IC= 0
2
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 20mA ; IB= 4mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.5
μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
40
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
600
1000
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
1.0
2.0
pF
rbb’ • CC
Base Time Constant
VCB= 10V,IC = 10 mA,f = 31.8 MHz
10
25
ps
PG
Power Gain
VCE = 10 V,IC = 5mA;f = 45MHz
33
dB
PG
Power Gain
VCE = 10 V,IC = 5mA;f = 200MHz
18
dB
isc Website:www.iscsemi.cn
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