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BU1706AX Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU1706AX Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU1706AX ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0; L= 25mH 750 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 1.3 V ICES Collector Cutoff Current VCE= VCESM; VBE= 0 VCE= VCESM; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 12V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 5mA; VCE= 10V 8 hFE-2 DC Current Gain IC= 400mA; VCE= 3V 12 35 hFE-3 DC Current Gain IC= 1.5A; VCE= 1V 5 Switching Times Resistive Load ton Turn-On Time 1.5 μs ts Storage Time 6.5 μs tf Fall Time IC= 1.5A; IB1= -IB2= 0.3A 1.0 μs isc Website:www.iscsemi.cn |
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