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KTD2017 Scheda tecnica(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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KTD2017 Scheda tecnica(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
1 / 2 page SMD Type IC www.kexin.com.cn 1 SMD Type IC TSSOP-8 Unit: mm 1: Drain1 2 : Source1 3 : Source1 4: Gate1 5: Gate2 6 : Source2 7 : Source2 8: Drain2 N-Channel Silicon MOSFET KTD2017 Features Low ON resistance. 2.5V drive. Mounting height 1.1mm Composite type, facilitating high-density mounting. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Source Voltage VGSS 10 V Drain Current(DC) ID 5A Drain Current (pulse) (PW 10ìs) IDP 20 A Allowable Power Dissipation PD 0.8 W Total Dissipation PT 1.3 W Channel Temperature Tch 150 Storage Temperature Tstg -55 to +150 |
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