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FZT949 Scheda tecnica(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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FZT949 Scheda tecnica(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page 2 SMD Type Transistors www.kexin.com.cn FZT949 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -50 -80 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -30 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -50 -80 V Collector Cut-Off Current ICBO VCB=-40V VCB=-40V,Ta = 100 -50 -1 nA ìA Emitter Cut-Off Current IEBO VEB=-6V -10 nA Collector-emitter saturation voltage * VCE(sat) IC=-0.5A, IB=-10mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-6A, IB=-250mA* -50 -85 -190 -350 -75 -140 -270 -440 V Base-emitter saturation voltage * VBE(sat) IC=-5.5A, IB=-500mA -1100 -1250 V Base-emitter ON voltage * VBE(on)IC=-5.5A, VCE=-1V -900 -1060 V IC=-10mA, VCE =-1V 100 200 IC=-1A, VCE =-1V* 100 200 300 IC=-5A, VCE =-1V* 75 140 IC=-20A, VCE =-2V* 35 Transitional frequency fT IC=-100mA, VCE=-10V, f=50MHz 100 MHz Output capacitance Cobo VCB=-10V, f=1MHz 122 pF Turn-on time t(on) IC=-4A, VCC=-10V 120 ns Turn-off time t(off) IB1=IB2=-400mA 130 ns * Pulse test: tp = 300 ìs; d 0.02. hFE Static Forward Current Transfer Ratio |
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