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FZT869 Scheda tecnica(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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FZT869 Scheda tecnica(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
2 / 2 page 2 SMD Type Transistors www.kexin.com.cn Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 60 120 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 25 35 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 6 8 V Collector Cut-Off Current ICBO VCB=50V VCB=50V,Ta = 100 50 1 nA ìA Emitter Cut-Off Current IEBO VEB=6V 10 nA Collector-emitter saturation voltage * VCE(sat) IC=0.5A, IB=10mA IC=1A, IB=10mA IC=2A, IB=10mA IC=6.5A, IB=150mA 35 67 168 50 110 215 350 mV Base-emitter saturation voltage * VBE(sat) IC=6.5A, IB=300mA 1.2 V Base-Emitter Turn-On Voltage * VBE(on)IC=6.5A, VCE=1V 1.13 V DC current gain * hFE IC=10mA, VCE=1V IC=1A, VCE=1V IC=7A, VCE=1V IC=20A, VCE=2V 300 300 200 40 450 450 300 100 Transitional frequency fT IC=100mA, VCE=10V f=50MHz 100 MHz Output capacitance Cobo VCB=10V, f=1MHz 70 pF Turn-on time t(on) IC=1A, VCC=10V 60 ns Turn-off time t(off) IB1=IB2=100mA 680 ns * Pulse test: tp = 300 ìs; d 0.02. FZT869 Marking Marking FZT869 |
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