KDV303N datasheet(2/4 Pages) KEXIN

Il numero della parte	KDV303N

Spiegazioni elettronici	Digital FET, N-Channel

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Produttore elettronici	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

VGS = 0 V, ID = 250 μA

25

V

VDS =20 V, VGS = 0 V

1

μA

VDS =20 V, VGS = 0 V,TJ=55℃

10

μA

Gate-Body Leakage Current,Forward

IGSSF

VGS = 8V, VDS = 0 V

100

nA

Gate-Body Leakage Current,Reverse

IGSSR

VGS = -8 V, VDS = 0 V

-100

nA

Gate Threshold Voltage *

VGS(th)

VDS = VGS, ID = 250 μA

0.65

0.8

1.5

V

VGS = 4.5V, ID =0.5A

0.33

0.45

Ω

VGS = 4.5V, ID = 0.2A, TJ =125℃

0.52

0.8

Ω

VGS = 2.7V, ID =0.2 A

0.44

0.6

Ω

On-State Drain Current *

ID(on)

VGS = 2.7 V, VDS =5 V

0.5

A

Forward Transconductance *

gFS

VDS = 5V, ID = 0.5 A

1.45

S

Input Capacitance

Ciss

VDS = 10 V,

50

pF

Output Capacitance

Coss

VGS = 0 V,

28

pF

Reverse Transfer Capacitance

Crss

f = 1.0 MHz

9

pF

Turn-On Delay Time

td(on)

VDD = 6V, ID =0.5A,

3

6

ns

Turn-On Rise Time

tr

VGS = 4.5V, RGEN = 50Ω

8.5

18

ns

Turn-Off Delay Time

td(off)

17

30

ns

Turn-Off Fall Time

tf

13

25

ns

Total Gate Charge

Qg

VDS = 5 V, ID = 0.5A,

1.64

2.3

nC

Gate-Source Charge

Qgs

VGS = 4.5V,

0.38

nC

Gate-Drain Charge

Qgd

0.45

nC

Maximum Continuous Drain-Source Diode

Forward Current

IS

0.3

A

Drain-Source Diode ForwardVoltage

VSD

VGS = 0 V, IS = 0.5 A

0.83

1.2

V

Zero Gate Voltage Drain Current

IDSS

* Pulse Test: Pulse Width ＜ 300μs, Duty Cycle ＜ 2.0%.

RDS(on)

Static Drain-Source On-Resistance*

KDV303N

SMD Type

IC

SMD Type

MOSFET

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