2SC4942 datasheet(1/1 Pages) KEXIN

Il numero della parte	2SC4942

Spiegazioni elettronici	NPN Silicon Transistors

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Produttore elettronici	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

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NPN Silicon Transistors

2SC4942

Features

New package with dimensions in between those of small

signal and power signal package

High voltage

Fast switching speed

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB = 600 V, IE =0

10

ìA

Emitter cutoff current

IEBO

VEB =7.0 V, IC =0

10

ìA

VCE =5.0 V, IC = 0.1 A

30

55

120

VCE =5.0 V, IC =0.5 A

5

10

Collector saturation voltage

VCE(sat)

IC = 400 mV, IB = 80 mA

0.35

1.0

V

Base saturation voltage

VBE(sat)

IC = 400 mV, IB =80mA

0.9

1.2

V

Gain bandwidth product

fT

VCE =5.0 V, IE = ?50 mA

30

MHz

Output capacitance

Cob

VCB =10V, IE = 0, f = 1.0 MHz

15

pF

Turn-on time

tON

IC =0.5 A, VCC= 250 V

0.1

0.5

ìs

Storage time

tstg

IB1 =?IB2 = 0.1 A

4.0

5.0

ìs

Fall time

tf

RL = 500Ù

0.2

0.5

ìs

hFE

DC current gain

hFE Classification

Marking

AA1

AA2

AA3

hFE

30 to 60

40 to 80

60 to120

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

600

V

Collector to emitter voltage

VCEO

600

V

Emitter to base voltage

VEBO

7V

Collector current (DC)

ID(DC)

1A

Collector current (pulse)

ID(pulse) *1

2

A

Total power dissipation

PT *2

2

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55 to 150

*1 PW

10 ms, duty cycle

50 %

*2 7.5 cm

2 X 0.7 mm ceramic board mounted

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