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TP2502ND Scheda tecnica(PDF) 2 Page - Supertex, Inc |
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TP2502ND Scheda tecnica(HTML) 2 Page - Supertex, Inc |
2 / 4 page 2 TP2502 Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source -20 V VGS = 0V, ID = -2.0mA Breakdown Voltage V GS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID= -1.0mA ∆VGS(th) Change in VGS(th) with Temperature 3.0 4.5 mV/°CVGS = VDS, ID= -1.0mA I GSS Gate Body Leakage -100 nA V GS = ± 20V, VDS = 0V I DSS Zero Gate Voltage Drain Current -100 µAVGS = 0V, VDS = Max Rating -10 mA VGS = 0V, VDS = 0.8 Max Rating T A = 125°C ID(ON) ON-State Drain Current -0.4 -0.7 VGS = -5.0V, VDS = -15V -2.0 -3.3 V GS = -10V, VDS = -15V R DS(ON) 2.0 3.5 Ω V GS = -5.0V, ID = -250mA 1.5 2.0 VGS = -10V, ID = -1.0A ∆RDS(ON) Change in R DS(ON) with Temperature 0.75 1.2 %/°CVGS = -10V, ID = -1.0A G FS Forward Transconductance 0.3 0.65 V DS = -15V, ID = -1.0A CISS Input Capacitance 125 C OSS Common Source Output Capacitance 70 pF CRSS Reverse Transfer Capacitance 25 td(ON) Turn-ON Delay Time 10 t r Rise Time 11 td(OFF) Turn-OFF Delay Time 15 tf Fall Time 12 V SD Diode Forward Voltage Drop -1.3 -2.0 V V GS = 0V, ISD = -1.5A trr Reverse Recovery Time 300 ns VGS = 0V, ISD = -1.5A Notes: 1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Thermal Characteristics Electrical Characteristics (@ 25°C unless otherwise specified) Switching Waveforms and Test Circuit Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR*IDRM @ T A = 25°C °C/W °C/W TO-243AA -630mA -3.3A 1.6W† 15 78† -630mA -3.3A * I D (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V A ns V DD = -20V, ID = -1.0A, RGEN = 25Ω V GS = 0V, VDS = -20V f = 1.0 MHz Static Drain-to-Source ON-State Resistance |
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