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TP2502ND Scheda tecnica(PDF) 2 Page - Supertex, Inc

Il numero della parte TP2502ND
Spiegazioni elettronici  P-Channel Enhancement-Mode Vertical DMOS FETs
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Produttore elettronici  SUTEX [Supertex, Inc]
Homepage  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TP2502ND Scheda tecnica(HTML) 2 Page - Supertex, Inc

  TP2502ND Datasheet HTML 1Page - Supertex, Inc TP2502ND Datasheet HTML 2Page - Supertex, Inc TP2502ND Datasheet HTML 3Page - Supertex, Inc TP2502ND Datasheet HTML 4Page - Supertex, Inc  
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TP2502
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
BVDSS
Drain-to-Source
-20
V
VGS = 0V, ID = -2.0mA
Breakdown Voltage
V
GS(th)
Gate Threshold Voltage
-1.0
-2.4
V
V
GS = VDS, ID= -1.0mA
∆VGS(th)
Change in VGS(th) with Temperature
3.0
4.5
mV/°CVGS = VDS, ID= -1.0mA
I
GSS
Gate Body Leakage
-100
nA
V
GS = ± 20V, VDS = 0V
I
DSS
Zero Gate Voltage Drain Current
-100
µAVGS = 0V, VDS = Max Rating
-10
mA
VGS = 0V, VDS = 0.8 Max Rating
T
A = 125°C
ID(ON)
ON-State Drain Current
-0.4
-0.7
VGS = -5.0V, VDS = -15V
-2.0
-3.3
V
GS = -10V, VDS = -15V
R
DS(ON)
2.0
3.5
V
GS = -5.0V, ID = -250mA
1.5
2.0
VGS = -10V, ID = -1.0A
∆RDS(ON)
Change in R
DS(ON) with Temperature
0.75
1.2
%/°CVGS = -10V, ID = -1.0A
G
FS
Forward Transconductance
0.3
0.65
V
DS = -15V, ID = -1.0A
CISS
Input Capacitance
125
C
OSS
Common Source Output Capacitance
70
pF
CRSS
Reverse Transfer Capacitance
25
td(ON)
Turn-ON Delay Time
10
t
r
Rise Time
11
td(OFF)
Turn-OFF Delay Time
15
tf
Fall Time
12
V
SD
Diode Forward Voltage Drop
-1.3
-2.0
V
V
GS = 0V, ISD = -1.5A
trr
Reverse Recovery Time
300
ns
VGS = 0V, ISD = -1.5A
Notes:
1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Thermal Characteristics
Electrical Characteristics (@ 25°C unless otherwise specified)
Switching Waveforms and Test Circuit
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
θjc
θja
IDR*IDRM
@ T
A = 25°C
°C/W
°C/W
TO-243AA
-630mA
-3.3A
1.6W
15
78
-630mA
-3.3A
* I
D (continuous) is limited by max rated Tj.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D increase possible on ceramic substrate.
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
A
ns
V
DD = -20V,
ID = -1.0A,
RGEN = 25Ω
V
GS = 0V, VDS = -20V
f = 1.0 MHz
Static Drain-to-Source
ON-State Resistance


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