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TS652ID Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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TS652ID Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 9 page TS652 5/9 BANDWIDTH The small signal bandwidth is almost constant for gains between +18dB to 0dB and is in the order of 52MHz to 70MHz respectively. For 30dB gain the bandwidth is around 18MHz. The power bandwidth is typically equal to 30MHz for 2V peak to peak signals. MAXIMUM INPUT LEVEL The input level must not exceed the following values : negative peak value: must be greater than -V CC + 1.5V positive peak value: must be less than +VCC - 1.5V For example, if a +/-6V power supply is used, the input signal can swing between -4.5V and +4.5V. These values are due to common mode input range limitations of the input stage of the first amplifier. Some other limitations may occur, due to the slew rate of the first operational amplifier (typically in the or- der of 300V/ µs). This means that the maximum input signal decreases at high frequency. SINGLE SUPPLY OPERATION The incoming signal is AC coupled to the inputs. The TS652 can be used either with a dual or a single supply. If a single supply is used, the inputs are bi- ased to the mid supply voltage (+V CC/2). This bias network must be carefully designed, in order to reject any noise present on the supply rail. The AGND pin (9) must be connected to +V CC/2. The bias current of the second stage (inverting structure) is 8 µA for both amplifiers. A resistor divider structure can be used. Two resistances should be chosen by considering 8 µA as the 1% of the total current through these resistances. For a single +12V supply volt- age, two resistances of 7.5k Ω can be used. The differential input consists of a high pass circuit, formed by the 1 µF capacitor and a 1kΩ resistance and gives a break frequency of 160Hz. SINGLE +12V SUPPLY OF THE TS652 +Vcc2 Input 1 Input 2 -Vcc DGND GC1 GC2 GC3 GC4 Output 1 1 2 3 4 5 6 7 14 13 12 11 10 9 8 Output 2 AGND Power Down +Vcc1 10nF 1 µF 7.5k 7.5k 12V 10nF 1 µF 47k 47k 12V 1k 1k IN+ IN- 10nF 100nF 10 µF 12V 10nF 100nF 1 µF 1 µF TS652 |
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