Motore di ricerca datesheet componenti elettronici |
|
ST1000C16K0L Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
|
ST1000C16K0L Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93714 2 Revision: 11-Aug-08 ST1000C..K Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 1473 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave Double side (single side) cooled 1473 (630) A 55 (85) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 6540 A Maximum peak, one-cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 20.0 t = 8.3 ms 21.2 t = 10 ms 100 % VRRM reapplied 17.0 t = 8.3 ms 18.1 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 2000 kA2s t = 8.3 ms 1865 t = 10 ms 100 % VRRM reapplied 1445 t = 8.3 ms 1360 Maximum I2 √t for fusing I2 √t t = 0.1 to 10 ms, no voltage reapplied 20 000 kA2 √s Low level value of threshold voltage VT(TO)1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.950 V High level value of threshold voltage VT(TO)2 (I > π x I T(AV)), TJ = TJ maximum 1.024 Low level value of on-state slope resistance rt1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.283 m Ω High level value of on-state slope resistance rt2 (I > π x I T(AV)), TJ = TJ maximum 0.265 Maximum on-state voltage drop VTM Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse 1.80 V Maximum holding current IH TJ = 25 °C, anode supply 12 V resistive load 600 mA Typical latching current IL 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current dI/dt Gate drive 20 V, 20 Ω, t r ≤ 1 µs TJ = TJ maximum, anode voltage ≤ 80 % VDRM 1000 A/µs Typical delay time td Gate current 1 A, dIg/dt = 1 A/µs Vd = 0.67 % VDRM, TJ = 25 °C 1.9 µs Typical turn-off time tq ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs 300 BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 100 mA |
Codice articolo simile - ST1000C16K0L |
|
Descrizione simile - ST1000C16K0L |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |