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HZU6.2G Scheda tecnica(PDF) 2 Page - Renesas Technology Corp

Il numero della parte HZU6.2G
Spiegazioni elettronici  Silicon Planar Zener Diode for Surge Absorption
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Produttore elettronici  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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HZU6.2G Scheda tecnica(HTML) 2 Page - Renesas Technology Corp

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HZU-G Series
Rev.3.00 Jun 08, 2006 page 2 of 4
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Value
Unit
Power dissipation
Pd *
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note:
See Fig2.
Electrical Characteristics
(Ta = 25
°C)
Zener Voltage
Reverse Current
Dynamic Resistance
ESD-Capability *
2
VZ (V) *
1
Test
Condition
IR (
µA)
Test
Condition
rd (
Ω)
Test
Condition
— (kV) *
2
Type No.
Min
Max
IZ (mA)
Max
VR (V)
Max
IZ (mA)
Min
HZU5.1G
4.84
5.37
5
5
1.5
130
5
30
HZU5.6G
5.31
5.92
5
5
2.5
80
5
30
HZU6.2G
5.86
6.53
5
2
3.0
50
5
30
HZU6.8G
6.47
7.14
5
2
3.5
30
5
30
HZU7.5G
7.06
7.84
5
2
4.0
30
5
30
HZU8.2G
7.76
8.64
5
2
5.0
30
5
30
HZU9.1G
8.56
9.55
5
2
6.0
30
5
30
HZU10G
9.45
10.55
5
2
7.0
30
5
30
HZU12G
11.42
12.60
5
2
9.0
35
5
30
HZU13G
12.47
13.96
5
2
10.0
35
5
30
Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330
Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec
Mark Code
Type No.
Mark No.
HZU5.1G
51
HZU5.6G
56
HZU6.2G
62
HZU6.8G
68
HZU7.5G
75
HZU8.2G
82
HZU9.1G
91
HZU10G
10
HZU12G
12
HZU13G
13


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