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SI1972DH Scheda tecnica(PDF) 2 Page - Vishay Siliconix |
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SI1972DH Scheda tecnica(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number: 74398 S-62442-Rev. A, 27-Nov-06 Vishay Siliconix Si1972DH Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 23.5 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 4.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.5 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = 10 V 4 A Drain-Source On-State Resistancea rDS(on) VGS = 10 V, ID = 1.3 A 0.155 0.225 Ω VGS = 4.5 V, ID = 0.29 A 0.278 0.340 Forward Transconductancea gfs VDS = 15 V, ID = 1.3 A 1.4 S Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 75 pF Output Capacitance Coss 18 Reverse Transfer Capacitance Crss 6 Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 1.3 A 1.85 2.8 nC VDS = 15 V, VGS = 4.5 V, ID = 1.3 A 0.91 1.4 Gate-Source Charge Qgs 0.51 Gate-Drain Charge Qgd 0.3 Gate Resistance Rg f = 1 MHz 4.5 Ω Turn-On Delay Time td(on) VDD = 15 V, RL = 12.5 Ω ID ≅ 1.2 A, VGEN = 4.5 V, Rg = 1 Ω 15 25 ns Rise Time tr 50 75 Turn-Off Delay Time td(off) 715 Fall Time tf 15 25 Turn-on Delay Time td(on) VDD = 15 V, RL = 12.5 Ω ID ≅ 1.2 A, VGEN = 10 V, Rg = 1 Ω 510 Rise Time tr 10 15 Turn-Off Delay Time td(off) 10 15 Fall Time tr 612 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1 A Pulse Diode Forward Current ISM 4 Body Diode Voltage VSD IS = 1.2 A, VGS = 0 V 0.85 1.2 V Body Diode Reverse Recovery Time trr IF = 1.2 A, di/dt = 100 A/µs, TJ = 25 °C 20 40 ns Body Diode Reverse Recovery Charge Qrr 18 36 nC Reverse Recovery Fall Time ta 16 ns Reverse Recovery Rise Time tb 4 |
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