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SI1555DL-T1 Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SI1555DL-T1
Spiegazioni elettronici  Complementary Low-Threshold MOSFET Pair
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FEATURES
D TrenchFETr Power MOSFET
Pb-free
Available
Si1555DL
Vishay Siliconix
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
www.vishay.com
1
Complementary Low-Threshold MOSFET Pair
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
N-Channel
20
0.385 @ VGS = 4.5 V
0.70
N-Channel
20
0.630 @ VGS = 2.5 V
0.54
0.600 @ VGS = −4.5 V
−0.60
P-Channel
−8
0.850 @ VGS = −2.5 V
−0.50
1.200 @ VGS = −1.8 V
−0.42
Marking Code
RB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1555DL-T1
Si1555DL-T1—E3 (Lead (Pb)-Free)
SOT-363
SC-70 (6-LEADS)
6
4
1
2
3
5
Top View
S1
G1
D2
D1
G2
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
5 secs
Steady State
5 secs
Steady State
Unit
Drain-Source Voltage
VDS
20
−8
V
Gate-Source Voltage
VGS
"12
"8
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
"0.70
"0.66
−0.60
−0.57
Continuous Drain Current (TJ = 150_C)a
TA = 85_C
ID
"0.50
"0.48
−0.43
−0.41
A
Pulsed Drain Current
IDM
"1.0
A
Continuous Source Current (Diode Conduction)a
IS
0.25
0.23
−0.25
−0.23
Maximum Power Dissipationa
TA = 25_C
PD
0.30
0.27
0.30
0.27
W
Maximum Power Dissipationa
TA = 85_C
PD
0.16
0.14
0.16
0.14
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 5 sec
R
360
415
Maximum Junction-to-Ambienta
Steady State
RthJA
400
460
_C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
300
350
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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